Method of manufacturing a voltage controlled oscillator

Details Method of manufacturing a voltage controlled oscillator Method of manufacturing a voltage controlled oscillator

2007-04-27

2009-02-17

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S025410, C029S846000, C310S366000, C333S196000

Reexamination Certificate

active

07490390

ABSTRACT:
A manufacturing method is provided for a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. The variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

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A. P. S. Khanna et al., “A 2GHz Voltage Tunable FBAR Oscillator”, IEEE MTT-S Digest, Jul. 2003, pp. 717-720.

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