Method of manufacturing a virtual ground split gate nonvolatile

Details Method of manufacturing a virtual ground split gate nonvolatile Method of manufacturing a virtual ground split gate nonvolatile

1995-09-08

1996-07-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437979, H01L 218247

Patent

active

055366686

ABSTRACT:
The present invention discloses a method of manufacturing a nonvolatile memory device. According to the present invention, in a nonvolatile memory device in which an equal voltage is applied to the control gates formed along both sides of the bit lines, the continuity of the control gates can be enhanced by interconnecting these control gates inside the cell arrays, resulting in a higher integration of the device and a reduction of the production of resistance therein, thereby improving the yield of the device.

REFERENCES:
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5162247 (1992-11-01), Hazani
patent: 5364806 (1994-11-01), Ma et al.
patent: 5429969 (1995-07-01), Chang

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