Method of manufacturing a vertically-structured GaN-based...

Details Method of manufacturing a vertically-structured GaN-based... Method of manufacturing a vertically-structured GaN-based...

2007-12-11

2007-12-11

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S097000

Reexamination Certificate

active

11430990

ABSTRACT:
The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

REFERENCES:
patent: 5779924 (1998-07-01), Krames et al.
patent: 6794276 (2004-09-01), Letertre et al.
patent: 6831302 (2004-12-01), Erchak et al.
patent: 2003/0222263 (2003-12-01), Choi

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