Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-07-19
2011-07-19
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S042000, C438S044000, C257S220000, C257S290000, C257SE33001, C257SE33006, C313S504000, C313S506000, C428S690000, C428S917000
Reexamination Certificate
active
07981705
ABSTRACT:
In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.
REFERENCES:
patent: 2006/0225644 (2006-10-01), Lee et al.
Chung Wei-Jung
Lee Shih-hung
Li Cheng-Hsien
Lin Wen-Hsien
Yeh Nien-Tze
Baker & McKenzie LLP
Lee Hsien-Ming
Roche David I.
Tekcore Co., Ltd.
LandOfFree
Method of manufacturing a vertical type light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a vertical type light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a vertical type light-emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2731871