Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Patent
1996-02-22
1998-07-14
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
438135, 438268, 438710, H01L 21332
Patent
active
057803242
ABSTRACT:
A manufacturing method of a vertical DMOSFET having a concave channel structure, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform, is disclosed. On a surface of a (100)-oriented n.sup.- -on-n.sup.+ epitaxial wafer is formed an initial groove by chemical dry etching. The grooved surface is then oxidized by LOCOS technique to form a LOCOS oxide film, whereby the concave structure is formed on the epitaxial wafer. The concave width is set to be at least twice the concave depth, and the sidewall angle is set to be approximately 50.degree. to make the sidewall plane (111) of high channel mobility plane. Following this process, p-type and n-type impurities are diffused from the main surface using the LOCOS oxide film as a double diffusion mask to form a body region and a source region.
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Hara Kunihiko
Kataoka Mitsuhiro
Takahashi Shigeki
Tokura Norihito
Yamamoto Tsuyoshi
Denso Corporation
Nguyen Tuan H.
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