Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Patent
1999-06-01
2000-05-23
Niebling, John F.
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
438393, 438396, 438253, H01L 2120
Patent
active
06066536&
ABSTRACT:
The invention discloses a variable capacitor including a first storage electrode, a second storage electrode, and a variable length means coupled therebetween. The capacitance can be adjusted by varying a dielectric space therebetween according with an electrical input. The method for manufacturing a variable capacitor in an integrated circuit includes the steps of forming a first storage electrode, a first dielectric layer, a second dielectric layer, a pair of contact channels, and a second sacrificial layer. The method further includes forming a third sacrificial layer, a second storage electrode, a resistor pattern, a passivation layer, and etching the third, the second, and the first sacrificial layer for having a dielectric space between the first storage electrode and the second storage electrode.
Industrial Technology Research Institute
Kennedy Jennifer M.
Liauh W. Wayne
Niebling John F.
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