Method of manufacturing a two-phase charge-transfer semiconducto

Details Method of manufacturing a two-phase charge-transfer semiconducto Method of manufacturing a two-phase charge-transfer semiconducto

1977-05-31

1978-10-24

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 357 24, 357 91, B01J 1700

Patent

active

041213335

ABSTRACT:
A new method of manufacturing a two-phase charge-transfer device operating by the charge-coupled technique, in which the asymmetry means associated with each group of electrodes are constituted by impurity barriers implanted in the semiconductor substrate and are automatically positioned in relation to the electrodes, in particular by carrying out implantation operations through masks constituted by films of silicon nitride and by the electrodes themselves, the films of silicon nitride subsequently being completely removed.
This method makes it possible to create linear charge-transfer registers and photo-sensitive matrices.

REFERENCES:
patent: 4047215 (1977-09-01), Frye

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