Method of manufacturing a tunnel magneto-resistance based...

Details Method of manufacturing a tunnel magneto-resistance based... Method of manufacturing a tunnel magneto-resistance based...

2005-02-15

2005-02-15

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S257000, C438S593000

Reexamination Certificate

active

06855563

ABSTRACT:
In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a TMR device therebetween, a first mask to be a mask shape for the TMR device is formed, the TMR device is formed by use of the first mask as a mask, thereafter a second mask to be used for forming a wiring for connecting the TMR device to a wiring on the lower side thereof is formed while causing at least a part of the second mask to overlap with the first mask so that the first mask becomes a mask at one end side of the wiring, and a connection wiring for connecting the TMR device to the wiring on the lower side thereof is formed by use of the first and second masks.

REFERENCES:
patent: 6522573 (2003-02-01), Saito et al.

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