Method of manufacturing a trench isolation structure for a...

Details Method of manufacturing a trench isolation structure for a... Method of manufacturing a trench isolation structure for a...

2005-09-13

2005-09-13

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S354000, C438S355000, C438S359000, C438S404000, C438S405000, C438S424000, C438S425000, C438S426000, C438S427000, C438S428000, C438S437000, C438S444000, C438S445000, C438S448000, C438S452000

Reexamination Certificate

active

06943088

ABSTRACT:
In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. Therefore, for a specified type of circuit elements, the characteristics of the corresponding isolation trenches may be tailored to achieve an optimum device performance.

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