Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2005-09-13
2005-09-13
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S354000, C438S355000, C438S359000, C438S404000, C438S405000, C438S424000, C438S425000, C438S426000, C438S427000, C438S428000, C438S437000, C438S444000, C438S445000, C438S448000, C438S452000
Reexamination Certificate
active
06943088
ABSTRACT:
In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. Therefore, for a specified type of circuit elements, the characteristics of the corresponding isolation trenches may be tailored to achieve an optimum device performance.
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Burbach Gert
Kruegel Stephan
van Bentum Ralf
Advanced Micro Devices , Inc.
Gurley Lynne A.
Williams Morgan & Amerson P.C.
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