Method of manufacturing a trench isolation having round corners

Details Method of manufacturing a trench isolation having round corners Method of manufacturing a trench isolation having round corners

1994-12-15

1996-11-26

Dang, Trung

Fishing, trapping, and vermin destroying

437 62, 437 63, 437 64, 437981, 148DIG50, 148DIG161, H01L 2176

Patent

active

055785182

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a major surface, a trench device isolation region having a trench selectively formed to define at least one island region in the major surface of the semiconductor substrate and a filler insulatively formed within the trench, an elongated gate electrode insulatively formed over a central portion of the island region so that each of its both ends which are opposed to each other in the direction of its length overlaps the trench device isolation region, and source and drain regions formed within the island region on the both sides of the gate electrode. The surface of the trench device isolation region is formed lower than the major surface of the semiconductor substrate. Those portions of the major surface of the semiconductor substrate that are located under the gate electrode at the boundary with the trench device isolation region are rounded, and the radius of curvature of these portions of the major surface of the semiconductor substrate is selected to be not less than 50 nm.

REFERENCES:
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patent: 4871685 (1989-10-01), Taka et al.
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patent: 5084408 (1992-01-01), Baba et al.
patent: 5258332 (1993-11-01), Horioka et al.
patent: 5332683 (1994-07-01), Miyashita et al.

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