Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2005-07-05
2005-07-05
Eckert, George (Department: 2815)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C438S135000, C438S137000, C438S138000, C257S107000, C257S117000
Reexamination Certificate
active
06913955
ABSTRACT:
A thyristor-based semiconductor device has a control port formed in a trench having a height-to-width aspect ratio that can be prohibitive to filling a bottom portion of the trench with an insulative material. According to an example embodiment of the present invention, a trench is formed in the substrate adjacent to a thyristor region, and a control port is formed near a bottom of the trench. An upper portion of the trench is then filled, thereby covering the control port. The control port is adapted to reduce the aspect ratio of a remaining portion of the trench over the control port, making it possible to fill trenches having a high height-to-width aspect ratio (e.g., at least 2:1). The thyristor control port is capacitively coupled to the thyristor region via a dielectric on a sidewall of the trench, and is configured and arranged to control current in the thyristor body via the capacitive coupling. This approach is also useful, for example, in high-density memory applications where trenches having high aspect ratios are desired, and in applications where thyristors having a cathode-down arrangement are desired.
REFERENCES:
patent: 4520552 (1985-06-01), Arnould et al.
patent: 5001535 (1991-03-01), Nishizawa et al.
patent: 5838026 (1998-11-01), Kitagawa et al.
patent: 5950075 (1999-09-01), Terasawa
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6225165 (2001-05-01), Noble, Jr. et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6727528 (2004-04-01), Robins et al.
patent: 2001/0041407 (2001-11-01), Brown
patent: 476296 (1992-03-01), None
patent: 55099774 (1980-07-01), None
patent: 02035714 (1990-02-01), None
K. DeMeyer, S. Kubicek and H. van Meer,Raised Source/Drains with Disposable Spacers for sub 100 nm CMOS technologies,Extended Abstracts of International Workshop on Junction Technology 2001.
Mark Rodder and D. Yeakley,Raised Source/Drain MOSFET with Dual Sidewall Spacers,IEEE Electron Device Letters, vol. 12, No. 3, Mar. 1991.
Yang-Kyu Choi, Daewon Ha, Tsu-Jae King and Chenming Hu,Nanoscale Ultrathin Body PMOSFETs With Raised Selective Germanium Source/Drain,IEEE Electron Device Letters, vol. 22, No. 9, Sep. 2001.
N. Lindert, Y.-K, Choi, L. Chang, E. Anderson, W.-C. Lee, T.-J. King, J. Bokor, and C. Hu,Quasi-Planar FinFETs with Selectively Grown Germanium Raised Source/Drain,2001 IEEE International SOI Conference, Oct. 2001.
T. Ohguro, H. Naruse, H. Sugaya, S. Nakamura, E. Morifuji, H. Kimijima, T. Yoshitomi, T. Morimoto, H.S. Momose, Y. Katsumata, and H. Iwai,High Performance RF Characteristics of Raised Gate/Source/Drain CMOS with Co Salicide,1998 Symposium on VLSI Technology Digest of Technical Papers.
Hsiang-Jen Huang, Kun-Ming Chen, Tiao-Yuan Huang, Tien-Sheng Chao, Guo-Wei Huang, Chao-Hsin Chien, and Chun-Yen Chang,Improved Low Temperature Characteristics of P-Channel MOSFETs with Si1-xGexRaised Source and Drain,IEEE Transactions on Electron Devices, vol. 48, No. 8, Aug. 2001.
Horch Andrew
Robins Scott
Diaz José R.
Eckert George
T-RAM, Inc.
LandOfFree
Method of manufacturing a thyristor device with a control... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a thyristor device with a control..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a thyristor device with a control... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3402314