Method of manufacturing a thin silicon-oxide layer

Details Method of manufacturing a thin silicon-oxide layer Method of manufacturing a thin silicon-oxide layer

1995-10-16

1997-04-22

Niebling, John

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

427553, 427558, 29827, H01L 2128, H01L 2156

Patent

active

056228961

ABSTRACT:
A method of providing an ultra-thin (<1 nm) silicon-oxide layer on a substrate surface, for example, of a metal. A film of a solution of a polyorganosiloxane is applied to the substrate surface. After drying, the polyorganosiloxane is completely converted to said silicon-oxide layer by means of an UV-ozone treatment. Such an ultra-thin silicon-oxide layer sufficiently protects a metal surface against corrosion. In addition, the silicon-oxide layer can be silanized with the customary silane coupling agents to improve the bond with polymers. The method can very suitably be used, for example, to treat metal leadframes for ICs and to provide a bonding layer for indium tin oxide on polyacrylate for a passive plate of LC displays.

REFERENCES:
patent: 3389160 (1968-06-01), Reid
patent: 5057336 (1991-10-01), Adachi et al.
patent: 5336532 (1994-08-01), Haluska et al.
patent: 5385739 (1994-10-01), Baney et al.
patent: 5387546 (1995-02-01), Maeda et al.
"Synthesis, Characterization, Stability, Aqueous Surface Activity . . . ", S.A. Snow in Langmuir, 1993, 9, pp. 424-430.

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