Method of manufacturing a thin ribbon wafer of semiconductor mat

Details Method of manufacturing a thin ribbon wafer of semiconductor mat Method of manufacturing a thin ribbon wafer of semiconductor mat

1984-04-09

1985-06-25

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148177, 156603, 156604, 264177F, 264212, 427 85, 427 86, 428620, 428939, H01L 21208

Patent

active

045252238

ABSTRACT:
A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, sufficient flexibility to be windable on a pipe having a diameter of 34 mm, malleability, and composed from p-type, i-type or n-type semiconductor material, and the composite clad of at least two elements thereof so as to form a p-n type junction. The composition of said semiconductor material consists of pure silicon or silicon with additional elements for improving the properties of a semiconductor; said additional element being at least one element in a proportion of less than 10 atomic % as compared to said silicon, said element selected from the group consisting of non-metallic elements such as hydrogen, phosphorus, sulfur and oxygen; semi-metallic elements such as boron, arsenic, tellurium, tin and selenium; metallic elements such as aluminum, gallium, indium, chromium, silver, iron and bismuth; and mixtures thereof with at least one element having smaller solubility limit than that of silicon. A method of manufacturing a thin ribbon wafer of composite clad of semiconductor material is also disclosed. Said flexible thin ribbon wafer of semiconductor is available for use as/or in a semiconductor electronic device.

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