Method of manufacturing a thin film semiconductor device

Details Method of manufacturing a thin film semiconductor device Method of manufacturing a thin film semiconductor device

1992-10-29

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437937, 148DIG150, H01L

Patent

active

053526147

ABSTRACT:
A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

REFERENCES:
patent: 4642144 (1987-02-01), Tiedje et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4927786 (1990-05-01), Nishida
patent: 4965225 (1990-10-01), Yamagishi et al.
patent: 4968384 (1990-11-01), Asano
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5093703 (1992-03-01), Minami et al. 437

Affiliated with

Also associated with

Rating

Method of manufacturing a thin film semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a thin film semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a thin film semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-580899