Method of manufacturing a tantalum solid state electrolytic capa

Details Method of manufacturing a tantalum solid state electrolytic capa Method of manufacturing a tantalum solid state electrolytic capa

1995-05-26

1997-12-23

Niebling, John

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

H01G 9012

Patent

active

056995970

ABSTRACT:
The use of a wire of a metal other than tantalum as a lead wire fixed to a chip formed by sintering tantalum powder is enabled. Prior to the formation of a dielectric film on a chip through anodic oxidation, an insulating material is applied to a surface of the lead wire fixed to the chip at a connection with the chip. With the application of the insulating material, a short circuit between the lead wire and a chemical conversion solution is prevented when the entire chip is drenched in the chemical conversion solution in anodic oxidation, so that a dielectric film of tantalum pentoxide is surely formed on the chip. As the lead wire, an arbitrary metal having conductivity may be used.

REFERENCES:
patent: 3956676 (1976-05-01), Vierow et al.
patent: 4231075 (1980-10-01), Morimoto et al.
patent: 4488941 (1984-12-01), Love
patent: 5036434 (1991-07-01), Kobayashi
patent: 5483415 (1996-01-01), Nakamura

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