Method of manufacturing a surrounding gate type MOSFET

Details Method of manufacturing a surrounding gate type MOSFET Method of manufacturing a surrounding gate type MOSFET

1997-07-29

1999-06-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438206, 438212, 438270, H01L 21332

Patent

active

059181150

ABSTRACT:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

REFERENCES:
patent: 4670768 (1987-06-01), Sunami et al.
patent: 5155054 (1992-10-01), Itoh
patent: 5169795 (1992-12-01), Nishizawa et al.
patent: 5177027 (1993-01-01), Lowrey et al.

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