Method of manufacturing a surface-emitting type semiconductor la

Details Method of manufacturing a surface-emitting type semiconductor la Method of manufacturing a surface-emitting type semiconductor la

1992-05-12

1993-08-17

Wilczewski, Mary

Fishing, trapping, and vermin destroying

148DIG95, 156649, 437 89, 437133, H01L 2120, H01S 318

Patent

active

052368645

ABSTRACT:
A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.

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