Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1997-06-30
1998-12-29
Dutton, Brian
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 43, H01L 2100
Patent
active
058540881
ABSTRACT:
In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps:
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G. M. Yang et al, "Influence of Mirror Reflectivity on Laser Peformance of Very-Low-Threshold Vertical Cavity Surface-Emitting Lasers", IEEE Photonics Technology Letters, vol. 7, No. 11, 1 Nov. 1995, pp. 1228-1230.
G. M. Yang et al, "Ultralow Threshold Current Vertical-Cavity Surface-Emitting Lasers Obtained with Selective Oxidation", Electronics Letters, vol. 31, No. 11, 25 May 1995, pp. 886-888.
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Derouin Estelle
Jacquet Joel
Plais Antonina
Poingt Francis
Salet Paul
Alcatel Alsthom Compagnie Generale d'Electricite
Dutton Brian
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