Method of manufacturing a support structure for a semiconductor

Details Method of manufacturing a support structure for a semiconductor Method of manufacturing a support structure for a semiconductor

1996-09-12

1999-07-20

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

438 52, 438455, 438459, H01L 2100

Patent

active

059266929

ABSTRACT:
A pressure sensor assembly including semiconductor transducer elements disposed upon a diaphragm support structure, wherein the support structure is comprised of a plurality of substrate layers anodically bonded together. A groove is disposed in the support structure creating an area of reduced thickness within the support structure. The ares of reduced thickness acts as a stress concentration region. As such, the transducer elements are disposed within the areas of reduced thickness so as to efficiently monitor any deformations experienced by the support structure. The groove that creates the areas of reduced thickness is formed in each of the substrate layers, prior to bonding into the overall structure, as such a very accurately tolerance groove can be formed into structure which greatly increases the reliability of the structure.

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