Semiconductor device manufacturing: process – Having superconductive component
Patent
1997-10-16
1998-12-22
Tsai, Jey
Semiconductor device manufacturing: process
Having superconductive component
505330, H01L 2100
Patent
active
058518436
ABSTRACT:
A method of manufacturing super conduction field effect transistor having a bi-crystal boundary junction is disclosed. According to the present invention, it is constituted such that on a SrTiO.sub.3 bi-crystal substrate, a bi-crystal super conductive thin films for source and drain electrode having a compound of YBa.sub.2 Cu.sub.3 O.sub.7-x, a non-super conductive oxide layer having a compound of PrBa.sub.2 Cu.sub.3 O.sub.7-x interposed between the bi-crystal super conductive thin films for source and drain electrode and the SrTiO.sub.3 bi-crystal substrate, a boundary channel interposed therebetween, a amorphous insulating layer for gate electrode having a compound of SrTiO.sub.3 deposited on a portion between the bi-crystal super conductive thin films for source and drain electrode above the boundary channel, metal pads for electrode, respectively, formed on the bi-crystal super conductive thin films for source and drain electrode and the amorphous insulating layer for gate electrode are sequentially formed.
REFERENCES:
patent: 5274249 (1993-12-01), Xi et al.
patent: 5466664 (1995-11-01), Inada et al.
patent: 5696392 (1997-12-01), Char et al.
Suh Jeong Dae
Sung Gun Yong
Electronics and Telecommunications Research Institute
Tsai Jey
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