Method of manufacturing a stripe-shaped heterojunction laser wit

Details Method of manufacturing a stripe-shaped heterojunction laser wit Method of manufacturing a stripe-shaped heterojunction laser wit

1987-05-11

1989-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG41, 148DIG56, 148DIG72, 148DIG95, 437167, 437183, 437112, 437970, 437951, 156612, 357 17, 372 46, H01L 3300, H01S 319

Patent

active

048393070

ABSTRACT:
A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

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