Fishing – trapping – and vermin destroying
Patent
1992-10-23
1994-03-22
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437909, 437911, 437913, H01L 2120
Patent
active
052964035
ABSTRACT:
A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the substrate crystal according to either metal organic chemical vapor deposition (MO-CVD) or molecular layer epitaxy (MLE), thereby providing a source-drain structure, a gate side formed by etching the semiconductor regions of the source-drain structure, the gate side comprising either a (111)A face or a (111)B face, and a semiconductor region deposited as a gate by way of epitaxial growth on the gate side according to either MO-CVD or MLE.
REFERENCES:
patent: 3865625 (1975-02-01), Cho et al.
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4642144 (1987-02-01), Tiedje et al.
patent: 4713358 (1987-12-01), Bulat et al.
patent: 4883770 (1989-11-01), Dohler et al.
patent: 5106770 (1992-04-01), Bulat et al.
patent: 5180684 (1993-01-01), Fujioka
patent: 5236863 (1993-08-01), Iranmanesh
Kurabayashi Toru
Nishizawa Jun-ichi
Fleck Linda J.
Hearn Brian E.
Jun-Ichi Nishizawa
Research Development Corp. of Japan
Zaidan Hojin Handotai Kenkyu Shinkokai
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