Method of manufacturing a stacked semiconductor device

Details Method of manufacturing a stacked semiconductor device Method of manufacturing a stacked semiconductor device

1985-07-01

1986-02-11

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 29576E, 29576J, H01L 21365

Patent

active

045697000

ABSTRACT:
The invention provides a stacked semiconductor device having a plurality of monocrystalline semiconductor films of the same material which are formed on a monocrystalline semiconductor substrate and between which insulating films are sandwiched wherein the semiconductor device comprises at least one connecting region, and wherein the semiconductor substrate and the semiconductor films are vertically connected at the one connecting region.

REFERENCES:
patent: 4270960 (1981-06-01), Bollen et al.
patent: 4319954 (1982-03-01), White et al.
patent: 4323417 (1982-04-01), Lam
patent: 4498951 (1985-02-01), Tamura et al.
patent: 4523962 (1985-06-01), Nishimura
IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980, pp. 5484-5485, Armonk, US, C. Chang et al.: "Multilayered Integrated Structures".

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