Etching a substrate: processes – Forming or treating optical article
Reexamination Certificate
2006-11-14
2006-11-14
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Forming or treating optical article
C216S002000, C216S039000, C216S056000, C216S067000, C216S079000, C216S099000, C205S656000
Reexamination Certificate
active
07135120
ABSTRACT:
The UV, deep UV and/or far UV (ultraviolet) filter transmission spectrum of an MPSi spectral filter is optimized by introducing at least one layer of substantially transparent dielectric material on the pore walls. Such a layer will modify strongly the spectral dependences of the leaky waveguide loss coefficients through constructive and/or destructive interference of the leaky waveguide mode inside the layer. Increased blocking of unwanted wavelengths is obtained by applying a metal layer to one or both of the principal surfaces of the filter normal to the pore directions. The resulting filters are stable, do not degrade over time and exposure to UV irradiation, and offer superior transmittance for use as bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy and biomedical analysis systems.
REFERENCES:
patent: 4874484 (1989-10-01), Foell et al.
patent: 5262021 (1993-11-01), Lehmann et al.
patent: 5348627 (1994-09-01), Propst et al.
patent: 5431766 (1995-07-01), Propst et al.
patent: 5544772 (1996-08-01), Soave et al.
patent: 5645684 (1997-07-01), Keller
patent: 5987208 (1999-11-01), Gruning et al.
patent: 5997713 (1999-12-01), Beetz, Jr. et al.
patent: 6014251 (2000-01-01), Rosenberg et al.
patent: 6168906 (2001-01-01), Bernstein et al.
patent: 6380099 (2002-04-01), Sakaguchi et al.
patent: 6521149 (2003-02-01), Mearini et al.
patent: 6526191 (2003-02-01), Geusic et al.
patent: 6614575 (2003-09-01), Gruning et al.
patent: 2002/0036299 (2002-03-01), Young et al.
patent: 2004/0004779 (2004-01-01), Kochergin et al.
patent: 2005/0199510 (2005-09-01), Kochergin et al.
patent: 42 02 454 (1993-11-01), None
patent: 0 296 348 (1989-10-01), None
H. Ruda et al., “Mercury Pressure-Induced LPE Growth of HgCdTe,” J. Electrochem. Soc., 130, p. 228-230 (1983).
P. H. Berning and A. F. Turner, “Induced transmission in absorbing films applied to band pass filter design,” 47 Journal of the Optical Society of America 230, 1957).
Fritz Keilmann, “Infrared High-Pass Filter with High Contrast,” Int. J. of Infrared and Millimeter Waves 2, 259-272 (1981).
T. Timusk and P. L. Richards, “Near millimeter wave bandpass filters,” Appl. Optics 20, Issue 8, 1355 (Apr. 1981).
P. G. Huggard, M. Meyringer, A. Schilz, K. Goller, and W. Prettl, “Far-Infrared Band pass-Filters from Performated Metal Screens,” Appl. Optics 33, 39 (1994).
Lehmann et al., “Optical shortpass filters based on macroporous silicon,” Appl. Phys. Lett. V 78, N.5, Jan. 2001.
A. Birner et al., “Silicon-Based Photonic Crystals,” Adv. Mater. 2001, 13 No. 6, Mar. 2001.
M. Christophersen et al., “Crystal orientation and electrolyte dependence for macropore nucleation and stable growth on p-type Si,”Materials Science and EngineeringB69-70 (2000) 194-198, May 2000.
J. Schilling et al., “Three-dimensional photonic crystals based on Macroporous silicon with modulated pore diameter”,Appl. Phys. Lett. V 78, N.9, Feb. 2001.
S. Izuo et al., “A novel electrochemical etching technique for n-type silicon,”Sensors and ActuatorsA 97-98 (2002), pp. 720-724.
A. Vyatkin et al., “Random and Ordered Macropore Formation in p-Type Silicon,”J. of the Electrochem. Soc., 149 (1), pp. G70-G76 (2002).
K. Barla et al.,J. Cryst. Growth, 68, p. 721 (1984).
H. Föll et. al, “Formation and application of porous silicon”,Mat. Sci. Eng. R 39 (2002), pp. 93-141 “Formation and application of porous silicon”.
D.J. Lockwood et al., “Optical properties of porous GaAs,”Physica E, 4, p. 102 (1999).
S. Langa et al., “Observation of crossing pores in anodically etched n-GaAs,”Appl. Phys. Lett. 78(8), pp. 1074-1076, (2001).
B.H. Erne et al.,Adv. Mater., 7, p. 739 (1995).
P.A. Kohl et al., “The Photoelectrochemical Oxidation of (100), (111), and (111)n-InP and n-GaAs,”J. Electrochem. Soc., 130, p. 2288-2293 (1983).
Schmuki P et al.,Physica Status Solidi A, “Pore Formation on n-InP,” 182 (1), pp. 51-61, (2000).
S. Langa et al., “Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP,”J Electrochem. Soc. Lett., 3 (11), p. 514-516, (2000).
J.v.d. Lagemaat, Utrecht, Thesis (1998).
S. Langa et al.,Phys. Stat. Sol. (A), 195 (3), “Electrochemical pore etching in Ge,” R4-R6 (2003).
H. Föll et al., “Porous III-V compound semiconductors: formation, properties, and comparison to silicon”,Phys. Stat. Sol. A, 197 (1), pp. 61-70 (2003).
M. Christophersen et al., “A comparison of pores in silicon and pores in III-V compound mateials”,Phys. Stat. Sol. A, 197 (1), pp. 197-203, (2003).
H. Föll et al., “Pores in III-V Semiconductors”,Adv. Materials, Review, 2003, 15, pp. 183-198, (2003).
S. Langa et al.,Phys. Stat. Sol. A, 197 (1), p. 77, (2003) “Single crystalline 2D porous arrays obtained by self organization in n-InP” (pp. 77-82).
R.C. Furneaux et al., “The formation of controlled-porosity membranes from anodically oxidized aluminium,”Nature, 337, p. 147 (Jan. 1989).
Schmuki, P. et al.,Physica Status Solidi A, “Formation of porous layers on InSb(100) by anodization,” 197, No. 1, pp. 71-76 (2003).
Kochergin Vladimir
Swinehart Philip
Ahmed Shamim
Lake Shore Cryotronics, Inc.
Nixon & Vanderhye P.C.
LandOfFree
Method of manufacturing a spectral filter for green and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a spectral filter for green and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a spectral filter for green and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3652348