Method of manufacturing a spectral filter for green and...

Electrolysis: processes – compositions used therein – and methods – Electrolytic erosion of a workpiece for shape or surface... – Eroding workpiece of nonuniform internal electrical...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C205S665000, C205S667000, C205S684000, C205S674000, C216S002000, C216S024000, C216S049000, C216S056000, C216S067000, C216S079000, C216S099000

Reexamination Certificate

active

07045052

ABSTRACT:
A method of manufacture for optical spectral filters with omnidirectional properties in the visible, near IR, mid IR and/or far IR (infrared) spectral ranges is based on the formation of large arrays of coherently modulated waveguides by electrochemical etching of a semiconductor wafer to form a pore array. Further processing of said porous semiconductor wafer optimizes the filtering properties of such a material. The method of filter manufacturing is large scale compatible and economically favorable. The resulting exemplary non-limiting illustrative filters are stable, do not degrade over time, do not exhibit material delamination problems and offer superior transmittance for use as bandpass, band blocking and narrow-bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy, optical communications, astronomy and sensing.

REFERENCES:
patent: 4689125 (1987-08-01), Burrus et al.
patent: 4874484 (1989-10-01), Foell et al.
patent: 5262021 (1993-11-01), Lehmann et al.
patent: 5348627 (1994-09-01), Propst et al.
patent: 5431766 (1995-07-01), Propst et al.
patent: 5544772 (1996-08-01), Soave et al.
patent: 5645684 (1997-07-01), Keller
patent: 5987208 (1999-11-01), Grunig
patent: 5997713 (1999-12-01), Beetz, Jr. et al.
patent: 6004450 (1999-12-01), Northrup et al.
patent: 6468823 (2002-10-01), Scherer et al.
patent: 6483640 (2002-11-01), Tonucci et al.
patent: 6521149 (2003-02-01), Mearini et al.
patent: 6526191 (2003-02-01), Geusic et al.
patent: 4202454 (1992-01-01), None
Lehmann et al., Optical shortpass filters based on macroporous siliconAppl. Phys. Lett. V 78, N.5, Jan. 2001.
J. Schilling et al., “ Three-dimensional photonic crystals based on Macroporous silicon with modulated pore diameter”,Appl. Phys. Lett. V 78, N.9, Feb. 2001.
S. Izuo et al., “A novel electrochemical etching technique for n-type silicon,”Sensors and ActuatorsA 97-98 (2002), pp. 720-724, no month.
A. Vyatkin et al., “Random and Ordered Macropore Formation in p-Type Silicon,”J. of the Electrochem. Soc., 149 (1), pp. G70-G76 (2002), no month.
H. Föll et. al, “Formation and application of porous silicon”,Mat. Sci. Eng. R 39 (2002), pp. 93-141, no month.
S. Langa et al., “Observation of crossing pores in anodically etched n-GaAs,”Appl. Phys. Lett. 78(8), pp. 1074-1076, (2001), no month.
H H Föll et al., “Porous III-V compound semiconductors: formation, properties, and comparison to silicon”,Phys. Stat. Sol. A, 197 (1), pp. 61-70 (2003), no month.
M. Christophersen et al., “A comparison of pores in silicon and pores in III-V compound materials”,Phys. Stat. Sol. A, 197 (1), pp. 197-203, (2003), no month.
H. Föll et al., “Pores in III-V Semiconductors”,Adv. Materials, Review, 2003, 15, pp. 183-198, (2003), no month.
S. Langa et al.,Phys. Stat. sol. A, 197 (1), p. 77, (2003) “Single crystalline 2D porous arrays obtained by self organization in n-InP” (pp. 77-82), no month.
K. Barla et al., “X-Ray Topographic Characterization of Porous Silicon Layers,”J. Cryst. Growth, 68, North-Holland, Amsterdam, p. 721-726 (1984), no month.
B.H. Erne et al., “Porous Etching: A Means to Enhance the Photo response of Indirect Semiconductors,”Adv. Mater., 7, p. 739-742 (1995), no month.
P.A. Kohl et al., J. Electrochem. Soc., 130 (111), “The Photoelectrochemical Oxidation of (100), (111), and (lll) n-InP and n-GaAs,” p. 2288-2293 (Nov. 1983).
Schmuki P. et al.,Physica Status Solidi A, “Pore Formation on n-InP,” 182(1), pp. 51-61, (2000), no month.
S. Langa et al., “Formation of Porous Layers with Different Morphologies during Anodic Etching in n-InP,”J Electrochem. Soc. Lett., 3(11), p. 514-516, (2000), no month.
S. Langa et al.,Phys. Stat. Sol. (A), 195 (3), “Electrochemical pore etching in Ge,” R4-R6 (2003), no month.
Macleod H.A.,Thin-Film Optical Filters, 3rd ed., Institute of Physics Publishing, 2001, no month.
D.J. Lockwood et al., “Optical properties of porous GaAs,”Physica E, 4, pp. 102-110 (1999), no month.
Schmulki, P. et al., “Formation of porous layers on InSb(100) by anodization,”Phys. Stat. Sol. (a) 197, No. 1, pp. 71-76 (2003), no month.
Langa, S. et al., “Voltage oscillations—an emergent property at high density pore growth,”Phys. Stat. Sol. (a) 197, No. 1, pp. 186-191 (2003), no month.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a spectral filter for green and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a spectral filter for green and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a spectral filter for green and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3582221

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.