Method of manufacturing a solid-state imaging device

Details Method of manufacturing a solid-state imaging device Method of manufacturing a solid-state imaging device

2007-01-23

2009-02-10

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S070000, C257S290000, C257S291000, C257S292000, C257S294000, C257SE27159, C257SE27133, C257SE27134, C257SE27142

Reexamination Certificate

active

07488615

ABSTRACT:
A method of manufacturing a solid-state imaging device, wherein the solid-state imaging device comprising: a semiconductor substrate; a plurality of photodiodes that are formed on a surface of the semiconductor substrate so as to be arranged in an array form; and a light shielding film, provided on or above the surface of the semiconductor substrate, that has a plurality of openings in correspondence with respective ones of the photodiodes, the method comprising: laminating, on the surface of the semiconductor substrate, lamination layers including the light shielding film; opening through holes in the lamination layers, respectively, at positions corresponding to the photodiodes to form the openings in the light shielding film; forming a low refractive index material layer with a predetermined thickness isotropically on a side wall surface of each of the through holes; and filling a remaining hole portion of each of the through holes with a high refractive index material to form an optical waveguide for guiding incident light to each of the photodiodes.

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