Method of manufacturing a solid-state image sensing device havin

Details Method of manufacturing a solid-state image sensing device havin Method of manufacturing a solid-state image sensing device havin

1991-07-17

1992-05-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437 35, 437 53, 437150, H01L 3118, H01L 21339

Patent

active

051148650

ABSTRACT:
A solid-state image sensing device has an overflow drain structure for purging superfluous charges. The overflow drain structure includes a gate electrode (34), channel regions (35), and a drain region (32) formed inside each groove (26) formed on a main surface of a semiconductor substrate (6). Optoelectro transducers (4) are formed on main surface regions of the semiconductor substrate continuous with each groove. The drain region is formed on side walls and a bottom wall of each groove by oblique ion implantation. The overflow drain structure formed inside the groove occupies a reduced area on the main surface of the semiconductor substrate and increases its opening ratio.

REFERENCES:
patent: 4362575 (1982-12-01), Wallace
patent: 4396438 (1983-08-01), Goodman
patent: 4760273 (1988-07-01), Kimata
patent: 4851887 (1989-07-01), Hagiwara
C. H. Sequin, "Blooming Suppression in Charge Coupled Area Imaging Devices", The Bell Systems Technical Journal, Oct. 1972, pp. 1923-1926.

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