Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1988-08-25
1990-06-19
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
252500, 252518, H01G 904
Patent
active
049340336
ABSTRACT:
A solid electrolytic capacitor, and a method of manufacturing the same, includes a capacitor element which comprises a metal plate capable of having a dielectric oxidation layer formed thereon, a dielectric oxidation layer formed on a surface of the metal plate, a polymer layer of a heterocyclic compound formed on the dielectric oxidation layer, a conductive layer formed on the polymer layer, wherein the polymer layer near a defect interface of the dielectric oxidation layer is converted into an insulator, and terminals provided on respective ones of the metal plate and conductive layer.
REFERENCES:
patent: 2387759 (1945-10-01), Jarvis
patent: 2647079 (1953-07-01), Burnham
patent: 3375413 (1968-03-01), Brill
patent: 3553544 (1969-09-01), Puppolo et al.
patent: 3679944 (1972-07-01), Yoshimura et al.
patent: 3697822 (1972-10-01), Alwitt
patent: 3745508 (1973-07-01), Bruder et al.
patent: 3781976 (1974-01-01), Tomiwa
patent: 4009424 (1977-02-01), Itoh
patent: 4039904 (1977-08-01), Klein
patent: 4494299 (1985-07-01), Franklin et al.
patent: 4609971 (1986-09-01), Shaffer
patent: 4769115 (1988-09-01), Satoh et al.
patent: 4780796 (1988-10-01), Fukuda et al.
patent: 4803596 (1989-02-01), Hellwig et al.
Harakawa Yoshihiro
Izawa Koji
Nakamura Shinji
Takeuchi Hiedmitsu
Toita Sadamu
Chaudhuri Olik
Nitsuko Corporation
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