Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1994-11-04
1998-05-19
Niebling, John
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 915
Patent
active
057529868
ABSTRACT:
A solid electrolytic capacitor free of short circuits which may be caused by the creeping of a solid electrolyte comprising a conducting polymer, and having high volume efficiency per volume. The solid electrolytic capacitor is constructed by successively forming an oxide film, a solid electrolyte (conducting polymer) and a cathode layer on an anode body which has an anode lead planted thereon. Then heating is applied, by a heater chip, to a part of the solid electrolyte that has crept from the head of the anode body along the anode lead to convert it is insulation, so as to produce a solid electrolyte insulated portion thereby. Or, in another way, the creeping solid electrolyte can be removed by heating with a heater chip and generating a thermal decomposition reaction thereof while supplying sufficient additional oxygen.
REFERENCES:
patent: 4203194 (1980-05-01), McGrath
patent: 4401877 (1983-08-01), Webber
patent: 5454147 (1995-10-01), Kobayashi et al.
Arai Satoshi
Fujita Atsuhiko
Nishiyama Toshihiko
Ohi Masashi
Sakata Koji
Bilodeau Thomas G.
NEC Corporation
Niebling John
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