Method of manufacturing a single crystal layers

Details Method of manufacturing a single crystal layers Method of manufacturing a single crystal layers

1993-10-08

1995-05-02

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437133, 117 88, H01L 2120

Patent

active

054119154

ABSTRACT:
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

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patent: 4707216 (1987-11-01), Morkoc et al.
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 4987094 (1991-01-01), Colas et al.
patent: 4994408 (1991-02-01), Johnson
Journal of Crystal Growth 68 (1984), pp. 483-489.
Journal of Crystal Growth 17 (1972), pp. 189-206.

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