Method of manufacturing a silicon on insulator (SOI) semiconduct

Details Method of manufacturing a silicon on insulator (SOI) semiconduct Method of manufacturing a silicon on insulator (SOI) semiconduct

1990-10-03

1991-07-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437 63, H01L 21265, H01L 2174, H01L 2176, H01L 29784

Patent

active

050343351

ABSTRACT:
A semiconductor device includes a silicon layer of a first conductivity type, which is disposed on a dielectric substrate and in which at least two zones of a semiconductor circuit element of a second opposite conductivity type and a contact zone having the same conductivity type as, but a higher doping concentration than the silicon layer are provided, which zones adjoin a surface of the silicon layer. According to the invention, the contact zone extends below the zones of the field effect transistor. This semiconductor device has the advantage that it can be manufactured in a very simple manner. In a method of manufacturing this device, in a silicon layer of a first conductivity type disposed on a dielectric substrate are formed a contact zone having the same conductivity type as, but a higher doping concentration than the silicon layer and at least two zones of a semiconductor circuit element of a second opposite conductivity type. According to the invention, a masking layer is then used, of which an edge portion adjoining a part of the silicon layer not covered by the masking layer is bevelled. Subsequently, the contact zone with the desired form is provided, while being masked by a masking layer, by a single ion implantation.

REFERENCES:
patent: 4835113 (1989-05-01), Celler et al.
patent: 4923820 (1990-05-01), Beasom

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