Method of manufacturing a silicon monocrystal

Details Method of manufacturing a silicon monocrystal Method of manufacturing a silicon monocrystal

1997-03-10

1998-07-14

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117902, C30B 1520

Patent

active

057797900

ABSTRACT:
In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in a contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which will have an opening in the contact surface of the seed crystal when the contact surface is brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.

REFERENCES:
patent: 3271118 (1966-09-01), Bhola et al.
patent: 3621213 (1971-11-01), Jen et al.
patent: 3819421 (1974-06-01), Menkel et al.
patent: 5248378 (1993-09-01), Oda et al.
K. M. Kim et al., "Maximum Length of Large Diameter Czochralski Silicon Single Crystals at Fracture Stress Limit of Seed", Journal of Crystal Growth, 100 (1990) Mar., No. 3, pp. 527-528.

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