Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-02-21
2006-02-21
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000
Reexamination Certificate
active
07001823
ABSTRACT:
Provided are methods and composition for forming an isolation structure on an integrated circuit substrate. First, a trench is etched in the integrated circuit substrate. A lower dielectric layer is then formed in the trench such that the lower dielectric layer at least partially fills the trench. An upper dielectric layer is then formed over the lower dielectric layer to create an isolation structure, the upper dielectric layer and the lower dielectric layer together having an effective dielectric constant that is less than that of silicon dioxide, thereby enabling capacitance associated with the isolation structure to be reduced.
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Gopinath Venkatesh P.
Kamath Arvind
Lee Ming-Yi
Mirabedini Mohammad R.
Beyer Weaver & Thomas LLP
Isaac Stanetta
Lebentritt Michael
LSI Logic Corporation
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