Method of manufacturing a semiconductor using plasma processing

Details Method of manufacturing a semiconductor using plasma processing Method of manufacturing a semiconductor using plasma processing

1989-07-26

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437211, 437937, H01L 21321, H01L 2504

Patent

active

050136887

ABSTRACT:
An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

REFERENCES:
patent: 4579609 (1986-04-01), Reif et al.
patent: 4585537 (1986-04-01), Nakayama et al.
patent: 4749587 (1988-06-01), Bergmann et al.
patent: 4758775 (1988-07-01), Fujisaki et al.

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