Method of manufacturing a semiconductor using multi-layer antire

Details Method of manufacturing a semiconductor using multi-layer antire Method of manufacturing a semiconductor using multi-layer antire

1995-07-11

1998-02-17

Niebling, John

Fishing, trapping, and vermin destroying

437229, 15666111, H01L 21314

Patent

active

057190720

ABSTRACT:
In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.

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