Method of manufacturing a semiconductor substrate having dielect

Details Method of manufacturing a semiconductor substrate having dielect Method of manufacturing a semiconductor substrate having dielect

1984-05-02

1985-11-12

Hearn, Brian E.

Metal treatment

Compositions

Heat treating

148DIG90, 148DIG117, 148DIG127, 29578, 29576T, 29576B, H07L 21263, H07L 21225

Patent

active

045525951

ABSTRACT:
A method of manufacturing a semiconductor substrate having dielectric regions is disclosed. The method comprises steps of forming an amorphous silicon layer on the surface of a monocrystalline silicon substrate, annealing a selected surface of said amorphous silicon layer to form a crystallized region intended as an active region, subjecting the obtained structure to a thermal oxidation process to form said dielectric isolation regions, and removing an oxide coating formed on the surface of said crystallized region.

REFERENCES:
patent: 4292091 (1981-09-01), Togei
patent: 4381201 (1983-04-01), Sakurai
patent: 4448632 (1984-05-01), Akasaka
patent: 4509990 (1985-04-01), Vasudev
Muller et al., "On the Insulating Prop. of the Interfacial Layer Between Ion Bombard-Amorphous and Crystalline Silicons", Applied Physics, 13, 255-259, (1977).

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