Method of manufacturing a semiconductor structure suitable for p

Details Method of manufacturing a semiconductor structure suitable for p Method of manufacturing a semiconductor structure suitable for p

1989-06-13

1990-09-04

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

049550306

ABSTRACT:
A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.

REFERENCES:
patent: 4722087 (1988-01-01), Partin
patent: 4754459 (1988-06-01), Westbrook

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