Method of manufacturing a semiconductor structure for microwave

Details Method of manufacturing a semiconductor structure for microwave Method of manufacturing a semiconductor structure for microwave

1975-10-15

1977-08-30

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

H01L 754

Patent

active

040452522

ABSTRACT:
The method relates to the production of a very thin insulating or weakly-doped layer in the immediate neighborhood of a highly-doped layer within the body of a semiconductor structure designed to operate in the microwave range. For instance a P.sup.+ I N.sup.+ structure is obtained in an N.sup.+ -doped gallium arsenide substrate, by implanting a P.sup.+ - layer using beryllium ions. An insulating layer is spontaneously formed between the highly-doped layers. Using beryllium, the thickness is effectively of the order of one-tenth of a micron. In another example, an avalanche diode of high efficiency, made of gallium arsenide for microwave operation, having a P.sup.+ N.sup.- N.sup.+ N N.sup.+ structure is obtained wherein the layer N.sup.- is the thin weakly-doped layer in the immediate neighborhood of a highly-doped layer (N.sup.+), which is substantially as thin as the N.sup.- layer in this particular case.

REFERENCES:
patent: 3352725 (1967-11-01), Antell
patent: 3649369 (1972-03-01), Hunsperger et al.
patent: 3747203 (1973-07-01), Shannon
patent: 3856578 (1974-12-01), Payne et al.
patent: 3904449 (1975-09-01), DiLorenzo et al.
Poltoratskii et al., "Coherent Radiation of GaAs--by The Diffusion of Beryllium," Soviet Physics-Solid State, vol. 7, No. 7, Jan. 1966, pp. 1798, 1799.

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