Method of manufacturing a semiconductor random access memory ele

Details Method of manufacturing a semiconductor random access memory ele Method of manufacturing a semiconductor random access memory ele

1986-07-16

1988-04-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437 60, 437 69, 437160, H01L 2104, H01L 2122

Patent

active

047359153

ABSTRACT:
The semiconductor memory element comprises two capacitors and a switching MOS transistor. A first capacitor is constituted by a silicon semiconductor substrate, a thin oxide film and a first doped polycrystalline silicon layer, and a second capacitor is constituted by a second doped polycrystalline silicon layer, a thin oxide film between the first and the second doped polycrystalline silicon layers, and the first polycrystalline silicon layer. Interconnection layers necessary to form a single transistor type dynamic memory cell are also provided.

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