Method of manufacturing a semiconductor photonic integrated circ

Fishing – trapping – and vermin destroying

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437129, 437133, H01L 2120

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055433537

ABSTRACT:
A semiconductor photonic integrated circuit and a manufacturing method thereof involving a selective-area growth technique using a set of insulating film patterning masks formed on a semiconductor substrate. The mask width and the mask-to-mask open space width are variable but numerically limited. A single crystal growth process is carried out to form on the same substrate a plurality of contiguous bulk semiconductor layers or quantum well layers differing from one another in terms of growth layer thickness or composition. The differences in energy level between these layers are utilized so that semiconductor photonic integrated devices of different functions are formed on the substrate.

REFERENCES:
patent: 5019519 (1991-05-01), Tanaka et al.
patent: 5147825 (1992-09-01), Koch et al.
Central Research Laboratory, Hitachi Ltd.; M. Aoki et al. (1992): An MQW-EA modulator/DFB laser integrated lightsource fabricated by in-plane Eg control in selective area MOCVD growth.
T. Sasaki et al.; Opto-Electronics Research Lab., NEC Corporation, p. 4-161 (1991): Application of MOVPE Selective Growth to Photonic Devices.

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