Method of manufacturing a semiconductor package

Details Method of manufacturing a semiconductor package Method of manufacturing a semiconductor package

2007-06-27

2008-10-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Thermally responsive

C438S050000, C438S057000, C257S434000, C257S433000, C257S432000, C257SE31120

Reexamination Certificate

active

07439094

ABSTRACT:
Disclosed herein are a semiconductor package used in digital optical instruments and a method of manufacturing the same. The semiconductor package comprises a wafer made of a silicon material and having pad electrodes formed at one side surface thereof, an IR filter attached on the pad electrodes of the wafer by means of a bonding agent, terminals electrically connected to the pad electrodes, respectively, in via holes formed at the other side surface of the wafer, which is opposite to the pad electrodes, and bump electrodes, each of which is connected to one side of each of the terminals. The present invention is capable of minimizing the size of a semiconductor package having an image sensor, which is referred to as a complementary metal oxide semiconductor (CMOS) or a charge coupled device (CCD), through the application of a wafer level package technology, thereby reducing the manufacturing costs of the semiconductor package and accomplishing production on a large scale.

REFERENCES:
patent: 2004/0130640 (2004-07-01), Fujimori
patent: 2004/0266051 (2004-12-01), Kojima et al.
patent: 2005/0024752 (2005-02-01), Webster
patent: 2006/0043569 (2006-03-01), Benson et al.
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Office Action from the Korean Intellectual Property Office mailed May 15, 2006.
Office Action from the European Patent Office mailed May 19, 2006.

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