Method of manufacturing a semiconductor optoelectric integrated

Details Method of manufacturing a semiconductor optoelectric integrated Method of manufacturing a semiconductor optoelectric integrated

1990-04-11

1991-09-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 3, 437 51, 437 90, 437133, 437 89, 148DIG72, 148DIG103, 357 56, 372 50, 385 14, H01L 3118

Patent

active

050513729

ABSTRACT:
There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary region of the first epitaxial crystal to form a residual portion, and covering the residual portion with a selective growth mask, the second step of growing a second epitaxial crystal on an exposed substrate portion, removing an unnecessary portion of the second epitaxial crystal to form a residual portion of the second epitaxial crystal, and covering the residual portion of the second epitaxial crystal with a selective growth mask, and third step of growing a third epitaxial crystal on an exposed substrate portion and removing an unnecessary region of the third epitaxial crystal, wherein the first to third epitaxial crystal form any one of a pin photodiode crystal, a heterojunction bipolar transistor crystal, and a high electron mobility transistor crystal, and are different from each other.

REFERENCES:
patent: 4396443 (1983-08-01), Lewerenz et al.
patent: 4800262 (1989-01-01), Lentine
patent: 4868633 (1989-09-01), Plumton et al.
patent: 4904607 (1990-02-01), Riglet et al.
patent: 4996163 (1991-02-01), Sasaki et al.

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