Coating processes – Particles – flakes – or granules coated or encapsulated – Inorganic base
Reexamination Certificate
2005-02-01
2010-11-23
Cleveland, Michael (Department: 1712)
Coating processes
Particles, flakes, or granules coated or encapsulated
Inorganic base
C427S212000, C427S216000
Reexamination Certificate
active
07838069
ABSTRACT:
A reaction in which a surface-treating material for providing a semiconductor nanoparticle with one or more kinds of electron-releasing groups is added and in which the electron-releasing groups are arranged on the surface of the semiconductor nanoparticle is accelerated by irradiating the semiconductor nanoparticle with light during surface modification, thereby reducing the reaction time.
REFERENCES:
patent: 6251303 (2001-06-01), Bawendi et al.
patent: 6977182 (2005-12-01), Sato et al.
patent: 7329369 (2008-02-01), Sato et al.
patent: 2001/0019806 (2001-09-01), Sato et al.
patent: 1 333 064 (2003-01-01), None
patent: 1 384 757 (2003-07-01), None
patent: 2005-105155 (2003-09-01), None
patent: WO 00/17655 (1999-09-01), None
Torimoto et al., “Characterization of Ultrasmall CdS Nanoparticles Prepared by the Size-Selective Photoetching Technique,” J. Phys. Chem. B 2001, 105, pp. 6838-6845.
Gaponik et al., “Thiol-Capping of CdTe Nanocrystals: An Alternative to Organometallic Synthesis Routes,” J. Phys. Chem. B 2002, 106, 7177-85.
Masahide Miyake et al., “Photoelectrochemical Characterization of Nearly Monodisperse CdS Nanoparticles—Immobilized Gold Electrodes”, Langmuir, vol. 15, No. 4, 1999, pp. 1503-1507.
Tsukasa Torimoto et al., “Characterization of Ultrasmall CdS Nanoparticles Prepared by the Size-Selective Photoetching Technique”, J. Phys, Chem. B, vol. 105, 2001, pp. 6838-6845.
European Search Report dated Oct. 25, 2007.
Japanese Patent Office Notice of Reasons for Rejection for Japanese Application No. 2004-025250, mailed Jun. 24, 2008, in Japanese.
Kuwabata Susumu
Sato Keiichi
A. Marquez, Esq. Juan Carlos
Cleveland Michael
Hitachi Software Engineering Co. Ltd.
Stites & Harbison PLLC
Vetere Robert
LandOfFree
Method of manufacturing a semiconductor nanoparticle does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor nanoparticle, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor nanoparticle will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4169588