Fishing – trapping – and vermin destroying
Patent
1991-10-15
1992-10-13
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 42, 437 44, 437 45, 357 234, H01L 21265
Patent
active
051550547
ABSTRACT:
A MOSFET having a projecting T-shaped semiconductor portion and a method of manufacturing the same. The MOSFET includes a semiconductor body having a first diffusion region of a first conductivity type, a T-shaped semiconductor portion projecting from the semiconductor body, a gate insulator film formed on a surface of said T-shaped portion, and a gate electrode formed on the gate insulator film. The top of the T provides a means by which contact can easily be made between a highly concentrated impurity region on the projecting portion and an electrode, even if the cross-sectional area of the base of the T is narrow. In a method of manufacturing the MOSFET a mask layer is placed on the semiconductor body with a hole which exposes the semiconductor body, a layer of semiconductor material is provided in the hole and on a portion of the mask layer around the hole so as to form the T-shaped portion, the mask layer is removed by the wet etching, a gate insulating layer is formed onside surfaces of the T-shaped portion, a gate electrode layer is formed on the gate insulating layer, and an impurity is introduced into the top of the T-shaped portion and a predetermined region of the semiconductor body located adjacent to the T-shaped portion.
REFERENCES:
patent: 4751196 (1988-06-01), Pennell et al.
patent: 4892835 (1990-01-01), Rabinzohn et al.
patent: 4992388 (1991-02-01), Pfiester
patent: 4997778 (1991-03-01), Sim et al.
patent: 5053348 (1991-10-01), Mishra et al.
Hearn Brian E.
OKI Electric Industry Co., Ltd.
Picardat Kevin M.
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