Method of manufacturing a semiconductor memory device having imp

Details Method of manufacturing a semiconductor memory device having imp Method of manufacturing a semiconductor memory device having imp

1994-09-30

1995-12-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437233, 437919, H01L 218242

Patent

active

054787688

ABSTRACT:
In a semiconductor memory device comprising a plurality of memory cells each including a switching transistor having a gate electrode and source/drain regions, one or more interlayer insulating layers are deposited on the surface of the substrate. A first conductive layer is deposited on the entire surface of the interlayer insulating layers. The first conductive layer has an etching rate slower than that of the interlayer insulating layers. A first coating film is formed on the entire surface of the first conductive layers. The first coating film and the first conductive layer on the source region are selectively removed by photolithography process to form an opening. A second coating film is formed in the opening to form a spacer on the inner side wall of the opening. The second coating film has an etching rate slower than that of the interlayer insulating layer. A contact hole is made on the source region using the first conductive layer and the spacer as a mask. A second conductive layer is formed in the contact hole and on the surface of the first conductive layer. The second conductive layer makes ohmic contact with the first conductive layer and the source region. The first conductive layer and the second conductive layer are patterned to form a storage electrode of a storage capacitor.

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