Fishing – trapping – and vermin destroying
Patent
1991-04-15
1992-09-22
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 89, 437109, 437233, 148DIG122, H01L 2120
Patent
active
051496666
ABSTRACT:
In a semiconductor memory device having a floating gate structure, the floating gate electrode is composed of 2 to 10 silicon grains. With the floating gate electrode, the insulation film, formed on the floating gate electrode, can have a high breakdown voltage. In a method of manufacturing a semiconductor memory device having a floating gate structure, an insulation film is formed on the silicon substrate, portions of the insulation film which are on the drain and source forming regions of the silicon substrate are removed, and a silicon layer is formed on the silicon substrate by an epitaxial growth process, constituting a floating gate, composed of 2 to 10 silicon grains. According to the manufacturing method, the insulation film formed on the floating gate electrode can have a high breakdown voltage.
REFERENCES:
patent: 4371421 (1983-02-01), Fan et al.
patent: 4590130 (1986-05-01), Cline
patent: 4597159 (1986-07-01), Usami et al.
patent: 4651408 (1987-03-01), MacElwee et al.
patent: 4686758 (1987-08-01), Liu et al.
patent: 4698316 (1987-10-01), Corboy, Jr. et al.
patent: 4868140 (1989-09-01), Yonehara
patent: 4874716 (1989-10-01), Rao
Mikata Yuuichi
Usami Toshiro
Chaudhari C.
Hearn Brian E.
Kabushiki Kaisha Toshiba
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