Method of manufacturing a semiconductor memory device having a c

Details Method of manufacturing a semiconductor memory device having a c Method of manufacturing a semiconductor memory device having a c

1994-11-30

1996-08-20

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 48, 437 50, 437 52, H01L 21265

Patent

active

055478840

ABSTRACT:
Field oxide films are formed on a semiconductor substrate of first conductivity type to be spaced from each other in the stripe shape. Gate insulating films are formed on the semiconductor substrate between the field oxide films. Word lines or control gate electrodes are formed on the field oxide films and the gate insulating films to be spaced from each other in the stripe shape along a direction perpendicular to the field oxide films. Grooves are formed in the gate insulating films and the field oxide films sandwiched by the word lines. Source regions of second conductivity type are formed in the semiconductor substrate in the grooves formed in the gate insulating films. A common source wiring region of second conductivity type for electrically connecting the respective source regions is formed in the semiconductor substrate in the grooves formed in the field oxide films. The impurity concentration of the common source wiring region is higher than that of the source regions, and the diffusion depth of the common source wiring region is deeper than that of the source regions.

REFERENCES:
patent: 4500899 (1985-02-01), Shirai et al.
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5103274 (1992-04-01), Tang et al.
patent: 5318921 (1994-06-01), Hsue et al.
patent: 5346842 (1994-09-01), Bergemont

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