Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

1998-04-20

2000-08-29

Pianalto, Bernard

Coating processes

Electrical product produced

Metallic compound coating

427240, 427346, 4273722, 438231, 438236, 438247, B05D 512

Patent

active

061105236

ABSTRACT:
A semiconductor memory device and method of fabricating same is provided that has a plurality of ferroelectric memory cells and reference cells. The semiconductor memory device includes a capacitor of each memory cell being the same size as that of each reference cell. A voltage applied to each reference cell is higher than a voltage applied to each memory cell to read data out of the semiconductor memory device. A method of fabricating a ferroelectric substance for a semiconductor memory device includes dissolving zirconium n-butoxide and titanium iso-proxide in 2-methoxyethanol; chelating a resultant, obtained by dissolution, with acetylacetone; adding lanthanium (La) iso-proxide to the resultant and refluxing the resultant; adding lead (Pb) acetate trihydrate to the resultant, and stirring the resultant, using a nitric acid as a catalyzer; and carrying out spin-coating and thermal treatment processes on the resultant.

REFERENCES:
"Ferroelectric Memory Device of Science Forum", p. 295. (No Date Avail).

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