Method of manufacturing a semiconductor light-emitting element

Details Method of manufacturing a semiconductor light-emitting element Method of manufacturing a semiconductor light-emitting element

2006-05-02

2006-05-02

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S069000

Reexamination Certificate

active

07037738

ABSTRACT:
There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

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R. Windisch, et al., IEEE Transactions on Electron Devices, vol. 47, No. 7, pp. 1492-1498, “40% Efficient Thin-Film Surface-Textured Light-Emitting Diodes by Optimization of Natural Lithography”, Jul. 2000.
Y. Kanamori, et al., O plus E, vol. 24, No. 1, pp. 53-59, “Nanometer, Antifeflection Structures Fabricated by Fast Atom Beam Etching”, Jan. 2002.
R. Windisch, et al., IEEE Transactions on Electron Devices, vol. 47, No. 7, pp. 1492-1498, “40% Efficient Thin-Film Surface-Textured Light-Emitting Diodes By Optimization of Natural Lithography”, Jul. 2000.

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