Method of manufacturing a semiconductor light-emitting device

Details Method of manufacturing a semiconductor light-emitting device Method of manufacturing a semiconductor light-emitting device

2007-10-23

2007-10-23

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S026000, C438S033000, C257S088000

Reexamination Certificate

active

10919270

ABSTRACT:
A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1-xAs layer and the active layer, in this order. Part of the AlxGa1-xAs layer with respect to the is changed into an AlOylayer (where y is a positive real number).

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